|
Scanning Electron
Microscopy (SEM)
Print
a PDF of this page (182K)
Scanning Electron
Microscopy (SEM) is a standard technique capable of imaging structures
and materials at resolutions well beyond the limits of optical microscopy.
The technique images surface topography with extreme depth of field.
 |
| SEM capture
of gate of MOS transistor |
Typical applications:
- High-resolution
microscopy
- Structure and
thickness studies of thin films in the nanometer range
- Measurements
of narrow lateral dimensions
- Analysis of
grains, precipitates or particulates
- Elemental analysis
by EDX (Energy Dispersive X-ray spectroscopy)
Equipment:
FESEM Hitachi S-4500
with EDX
Technical Description:
Analytical electron
microscopy is unique among material characterization techniques.
It enables the examination of microstructural features through high-resolution
imaging and the simultaneous acquisition of chemical and crystallographic
information from sub-micron regions of the specimen.
Another advantage
of using electron beams is the increase in depth of field compared
to optical microscopy. This allows clear pictures of complicated
topological features.
The interaction
of high-energy electrons with the sample produces X-rays, which
can be analyzed spectroscopically to obtain elemental information
about the specimen. Elements B to U can be detected using the windowless
EDX detector.
Print
a PDF of this page (182K)
|