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Emission Microscopy
(EMMI) and Optical Beam Induced Current (OBIC) Print
a PDF of this page (350K)
Emission microscopy
(EMMI) and optical beam induced current (OBIC) are efficient optical
analysis techniques used to detect and localize certain integrated
circuit (IC) failures. Emission microscopy and OBIC are non-invasive
techniques performed from either the front or back of devices.
Emission Microscopy
image showing light emission from failed devices at several
sites. The red background is an optical image overlay.
Equipment:
Zeiss LSM 310 with
Hamamatsu CCD camera
Alpha Innotech Portable Emission Microscope
Technical Description:
Many device defects
induce faint light emission in the visible and near infrared (IR)
spectrum. Emission microscopy uses a sensitive camera to view and
capture these optical emissions, allowing device analysts to detect
and localize certain IC defects. Since emissions can be detected
from the back side, MuAnalysis uses an IR laser to create an overlay
image of circuitry through the die. This allows failures to be related
directly to circuit features, speeding failure resolution.
Optical beam induced
current (OBIC) introduces photons into devices with a focused and
scanned laser. The induced photocurrent image is captured. Differences
in this image compared to a reference image can quickly pinpoint
short or open circuits, ESD or over-stress damage, or device-level
issues. Since OBIC introduces no charge into the circuit, it causes
no damage. The technique can be performed as easily from the back
as from the front.
Emission microscopy
and OBIC are powerful early-stage failure analysis techniques since
they localize failures non-invasively and require little in the
way of sample preparation. Flip-chip devices, difficult to study
by other means, are easily studied through the die without decapsulation. Print
a PDF of this page (350K)